10AX066H3F34E2SG 100% Fou & Uluai Fa'amama Fa'aesea 1 Li'o Fa'a'ese'ese 8-SOP
Uiga Oloa
EU RoHS | Tausi |
ECCN (US) | 3A001.a.7.b |
Tulaga Vaega | Malosi |
HTS | 8542.39.00.01 |
Ta'avale | No |
PPAP | No |
Suafa Aiga | Arria® 10 GX |
Fa'agasologa Tekinolosi | 20nm |
Tagata fa'aoga I/Os | 492 |
Numera o Resitala | 1002160 |
Galue Sapalai Galue (V) | 0.9 |
Elemene Fa'atatau | 660000 |
Numera o Fa'atele | 3356 (18x19) |
Ituaiga Manaoga Polokalama | SRAM |
Manatu Fa'amau (Kbit) | 42660 |
Aofa'i Numera o poloka RAM | 2133 |
Unite Logic Device | 660000 |
Numera masini o DLLs/PLLs | 16 |
Alalesi Transceiver | 24 |
Saosaoa Transceiver (Gbps) | 17.4 |
DSP tuuto | 1678 |
PCIe | 2 |
Polokalama | Ioe |
Lagolago Fa'atonu | Ioe |
Puipuiga Kopi | Ioe |
Fa'apolokalame i totonu o le System | Ioe |
Vasega Saosaoa | 3 |
Tulaga I/O Fa'ai'u Tasi | LVTTL|LVCMOS |
Fa'amatalaga Fa'alogo i fafo | DDR3 SDRAM|DDR4|LPDDR3|RLDRAM II|RLDRAM III|QDRII+SRAM |
Malosi'i Tulaga La'iti (V) | 0.87 |
Maualuluga o le Galulue Tulaga Voltage (V) | 0.93 |
Malolo I/O (V) | 1.2|1.25|1.35|1.5|1.8|2.5|3 |
La'ititi ole Vevela ole Gaioiina (°C) | 0 |
Maualuluga o le Gaioiina o le Vevela (°C) | 100 |
Fa'atauga Temperature Grade | Fa'alautele |
Fefa'ataua'iga | Arria |
Fa'amauina | Mauga i luga |
Maualuga o le afifi | 2.63 |
Aotelega afifi | 35 |
Umi ole afifi | 35 |
Suia PCB | 1152 |
Igoa o le afifi masani | BGA |
Fa'atau Fa'atau | FC-FBGA |
Faitauga Pin | 1152 |
Fa'atusa o Ta'ita'i | Polo |
Ituaiga Circuit Integrated
Pe a faatusatusa i electrons, photons e leai se tele static, fegalegaleaiga vaivai, malosi anti-faalavelave faʻalavelave, ma e sili atu ona talafeagai mo faʻamatalaga tuʻuina atu.O feso'ota'iga fa'apitoa e fa'amoemoe e avea ma tekonolosi autu e malepe ai le puipui o le eletise, puipui puipui ma puipui feso'ota'iga.Iluminant, coupler, modulator, waveguide masini e tuʻufaʻatasia i totonu o foliga mataʻutia maualuga e pei o le photoelectric integrated micro system, e mafai ona iloa le lelei, voluma, faʻaogaina o le eletise o le maualuga o le faʻaogaina o le photoelectric, faʻapipiʻi faʻapipiʻi ata e aofia ai le III - V compound semiconductor monolithic integrated (INP). ) tu'ufa'atasiga tu'ufa'atasiga, silicate po'o tioata (planar optical waveguide, PLC) fa'avae ma fa'avae fa'avae.
InP platform e masani ona faʻaaogaina mo le gaosiga o le laser, modulator, detector ma isi masini faʻagaioiga, tulaga maualalo tekinolosi, maualuga substrate tau;Faʻaaogaina o le PLC faʻavae e maua ai vaega passive, maualalo maualalo, voluma tele;O le fa'afitauli tele i fa'avae uma e lua o mea e le fetaui ma mea fa'aeletonika fa'avae silicon.O le mea sili ona lauiloa o le faʻaogaina o le photonic e faʻatatau i le silicon o le faʻagasologa e fetaui ma le CMOS process ma o le tau o le gaosiga e maualalo, o lea e manatu ai o le optoelectronic sili ona mafai ma e oʻo lava i mea uma-optical integration scheme.
E lua auala tu'ufa'atasia mo masini fa'ata'ita'i fa'atusa ma le CMOS.
O le lelei o le muamua o le photonic masini ma masini faaeletonika e mafai ona optimized eseese, ae o le afifiina mulimuli ane e faigata ma talosaga faapisinisi e faatapulaaina.O le mea mulimuli e faigata ona mamanuina ma faʻagasolo le tuʻufaʻatasia o masini e lua.I le taimi nei, o le fa'apotopotoga hybrid e fa'avae i luga o le tu'ufa'atasiga faaniukilia o le filifiliga sili lea