IPD042P03L3G BTS5215LAUMA1 IC Chip Mea Fa'aeletonika Fou

fa'amatalaga puupuu:

Auina imeli ia matou La'u mai le Pepa Aso

Fa'amatalaga Oloa

Faailoga o oloa

IPD042P03L3 G
Faiga fa'aleleia o le ala-P Transistor Field-Affect Transistor (FET), -30 V, D-PAK
O aiga Opti MOS ™ sili ona fou a Infineon e aofia ai le p-channel power MOSFETs.O nei oloa e fa'amalieina i taimi uma le maualuga ma le fa'atinoga o mana'oga i fa'amatalaga autu mo le fa'atulagaina o le eletise e pei o le tetee i luga o le setete ma le fa'atusa o uiga lelei.

Aotelega o Vaega
Faiga fa'aleleia
Tulaga fa'atatau
Fa'ailoga Avalanche
Suiga vave
Dv/dt fa'amauina
Pb-leai se ta'i-u'u
RoHS tausisia, e leai se Halogen
Agavaa e tusa ai ma le AEC Q101
Talosaga Avanoa
Galuega Pulea Malosiaga
Pulea afi
I luga o le laupapa uta
DC-DC
Tagata fa'atau
Fa'aliliuga tulaga fa'atatau
Power MOSFET avetaavale faitotoa
O isi suiga o talosaga

Fa'amatalaga

Uiga Oloa	Uiga Taua
Tufuga:	Infineon
Vaega o oloa:	MOSFET
RoHS:	Fa'amatalaga
Tekinolosi:	Si
Tulaga fa'apipi'i:	SMD/SMT
Paket/Mata:	TO-252-3
Transistor Polarity:	P-Alāvai
Numera o Auala:	1 alavai
Vds – Fa'avai-Source Breakdown Voltage:	30 V
Id – Fa'au'u Fa'au'u Fa'aauau:	70 A
Rds On – Fa'avai-Source Resistance:	3.5 mOhms
Vgs – Faitotoa-Mata'i Malosi:	- 20 V, + 20 V
Vgs th – Faitotoa-Suesuega Avetaavale Voltage:	2 V
Qg - Totogi Faitotoa:	175 nC
La'ititi ole Vevela ole Gaioiina:	- 55C
Maualuluga Fa'agaioiga Vevela:	+ 175 C
Pd – Fa'amama le Malosiaga:	150 W
Auala ala:	Fa'aleleia
igoa Fefa'ataua'iga:	OptiMOS
afifiina:	Reel
afifiina:	Oti le lipine
afifiina:	MouseReel
Fa'ailoga:	Infineon Technologies
Fa'atonuga:	Nofofua
Taimi o le Pau:	22 ns
Fa'asagaga i luma - Min:	65 S
Maualuluga:	2.3 mm
Umi:	6.5 mm
Ituaiga oloa:	MOSFET
Taimi tula'i:	167 ns
Fa'asologa:	OptiMOS P3
Aofaiga o pusa falegaosimea:	2500
Vaega laiti:	MOSFETs
Ituaiga Transistor:	1 P-Alāvai
Taimi Fa'atuai Taimi masani:	89 ns
Taimi Fa'atuai masani:	21 ns
Lautele:	6.22 mm
Vaega # Fa'aigoa:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Unit mamafa:	0.011640 oz