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IPD068P03L3G fou ulua'i Vaega Fa'aeletonika IC pu'upu'u MCU BOM auaunaga i fa'asoa IPD068P03L3G

fa'amatalaga puupuu:


Fa'amatalaga Oloa

Faailoga o oloa

Uiga Oloa

ITIGA FAAMATALAGA
Vaega Oloa Semiconductor Discrete

Transistors – FETs, MOSFETs – Nofofua

Mfr Infineon Technologies
Fa'asologa OptiMOS™
afifi Tape & Reel (TR)

Tipi tipi (CT)

Digi-Reel®

Tulaga Oloa Malosi
Ituaiga FET P-Alāvai
Tekinolosi MOSFET (Metal Oxide)
Fa'avai i Punavai Malosi (Vdss) 30 V
Fa'aita'i - Fa'asolo Fa'au'u (Id) @ 25°C 70A (Tc)
Malolo Avetaavale (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Totogi Faitotoa (Qg) (Max) @ Vgs 91 NC @ 10 V
Vgs (Max) ±20V
Fa'aulufale Gapa (Ciss) (Max) @ Vds 7720 pF @ 15 V
FET Vaega -
Malosi'esea (Max) 100W (Tc)
Galulue Vevela -55°C ~ 175°C (TJ)
Ituaiga Fa'amau Mauga i luga
Fa'atau Mea Fa'atau Mea PG-TO252-3
Paketi / Pusa TO-252-3, DPak (2 Leads + Tab), SC-63
Numera Oloa Fa'avae IPD068

Pepa ma Faasalalauga

TUSI FA'A'OA'OGA SOSO'OGA
Pepa fa'amaumauga IPD068P03L3 G
Isi Pepa Fa'atatau Taiala Numera Vaega
Oloa Fa'apitoa Faiga Fa'asologa o Fa'amaumauga
HTML Pepa Fa'amaumauga IPD068P03L3 G
EDA Fa'ata'ita'iga IPD068P03L3GATMA1 e le Ultra Librarian

Fa'avasegaina o le Si'osi'omaga & Fa'atau Atu

UIGA FAAMATALAGA
Tulaga RoHS ROHS3 tausisia
La'asaga o le Susū (MSL) 1 (E le fa'atapula'aina)
Tulaga REACH REACH Le afaina
ECCN EAR99
HTSUS 8541.29.0095

Punaoa Faaopoopo

UIGA FAAMATALAGA
Isi Igoa IPD068P03L3GATMA1DKR

IPD068P03L3GATMA1-ND

SP001127838

IPD068P03L3GATMA1CT

IPD068P03L3GATMA1TR

Paket masani 2,500

Transistor

O le transistor o le amasini semiconductormasani aifa'atelepesuifaailo eletise mamana.O le transistor o se tasi o poloka faufale autu o aso neifaaeletonika.[1]E aofia aimea semiconductor, e masani lava pe a ma le tolupitomo le feso'ota'iga i se eletise eletise.Avoltagepetaimi neifa'aoga i le tasi pea o fa'amau a le transistor e fa'atonutonu ai le taimi nei e ala atu i se isi paipa fa'amau.Talu ai e mafai ona maualuga atu le mana fa'atonutonu (fa'aulufale mai) nai lo le mana fa'atonutonu (fa'aulufale), e mafai e se transistor ona fa'ateleina se fa'ailoga.O nisi transistors o loʻo afifiina taʻitasi, ae tele isi o loʻo maua i totonumatagaluega tu'ufa'atasi.

Ausetalia-Hungarian physicist Julius Edgar Lilienfeldtuuina mai le manatu o le atransistor aafiaga fanuai le 1926, ae sa le mafai ona fausia moni se masini galue i lena taimi.[2]O le masini galue muamua na fausia o le atransistor fa'afeso'ota'ina faia i le 1947 e Amerika physicistsIoane BardeenmaWalter Brattaina o galue i laloWilliam ShockleyiBell Labs.O le toʻatolu na faʻasoa le 1956Nobel Prize in Physicsmo lo latou ausia.[3]O le ituaiga transistor sili ona faʻaaogaina o leu'amea-oxide-semiconductor field-effect transistor(MOSFET), lea na fatuina eMohamed AtallamaDawon Kahngi Bell Labs i le 1959.[4][5][6]Transistors na suia le fanua o mea tau eletise, ma saunia le ala mo mea laiti ma taugofieleitio,calculators, makomepiuta, faatasi ai ma isi mea.

O le tele o transistor e faia mai le mamasilikoni, ma nisi maigermanium, ae o isi mea semiconductor e faʻaaogaina i nisi taimi.O se transistor atonu e na'o le tasi le ituaiga o ave fe'avea'i, i totonu o se fa'ato'aga-effect transistor, po'o le lua ituaiga o ave fa'avevesi i totonu.bipolar junction transistormasini.Pe a faatusatusa i lefa'alava vai, transistors e masani ona laʻititi ma e manaʻomia le itiiti ifo o le malosi e faʻaogaina ai.O nisi paipa vacuum e sili atu nai lo transistors i le maualuga tele o laina eletise poʻo le maualuga o voltage faʻaogaina.E tele ituaiga o transistors e faia i faʻasalalauga faʻapitoa e le tele o gaosiga.


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