IPD068P03L3G fou ulua'i Vaega Fa'aeletonika IC pu'upu'u MCU BOM auaunaga i fa'asoa IPD068P03L3G
Uiga Oloa
ITIGA | FAAMATALAGA |
Vaega | Oloa Semiconductor Discrete |
Mfr | Infineon Technologies |
Fa'asologa | OptiMOS™ |
afifi | Tape & Reel (TR) Tipi tipi (CT) Digi-Reel® |
Tulaga Oloa | Malosi |
Ituaiga FET | P-Alāvai |
Tekinolosi | MOSFET (Metal Oxide) |
Fa'avai i Punavai Malosi (Vdss) | 30 V |
Fa'aita'i - Fa'asolo Fa'au'u (Id) @ 25°C | 70A (Tc) |
Malolo Avetaavale (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 2V @ 150µA |
Totogi Faitotoa (Qg) (Max) @ Vgs | 91 NC @ 10 V |
Vgs (Max) | ±20V |
Fa'aulufale Gapa (Ciss) (Max) @ Vds | 7720 pF @ 15 V |
FET Vaega | - |
Malosi'esea (Max) | 100W (Tc) |
Galulue Vevela | -55°C ~ 175°C (TJ) |
Ituaiga Fa'amau | Mauga i luga |
Fa'atau Mea Fa'atau Mea | PG-TO252-3 |
Paketi / Pusa | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Numera Oloa Fa'avae | IPD068 |
Pepa ma Faasalalauga
TUSI FA'A'OA'OGA | SOSO'OGA |
Pepa fa'amaumauga | IPD068P03L3 G |
Isi Pepa Fa'atatau | Taiala Numera Vaega |
Oloa Fa'apitoa | Faiga Fa'asologa o Fa'amaumauga |
HTML Pepa Fa'amaumauga | IPD068P03L3 G |
EDA Fa'ata'ita'iga | IPD068P03L3GATMA1 e le Ultra Librarian |
Fa'avasegaina o le Si'osi'omaga & Fa'atau Atu
UIGA | FAAMATALAGA |
Tulaga RoHS | ROHS3 tausisia |
La'asaga o le Susū (MSL) | 1 (E le fa'atapula'aina) |
Tulaga REACH | REACH Le afaina |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Punaoa Faaopoopo
UIGA | FAAMATALAGA |
Isi Igoa | IPD068P03L3GATMA1DKR IPD068P03L3GATMA1-ND SP001127838 IPD068P03L3GATMA1CT IPD068P03L3GATMA1TR |
Paket masani | 2,500 |
Transistor
O le transistor o le amasini semiconductormasani aifa'atelepesuifaailo eletise mamana.O le transistor o se tasi o poloka faufale autu o aso neifaaeletonika.[1]E aofia aimea semiconductor, e masani lava pe a ma le tolupitomo le feso'ota'iga i se eletise eletise.Avoltagepetaimi neifa'aoga i le tasi pea o fa'amau a le transistor e fa'atonutonu ai le taimi nei e ala atu i se isi paipa fa'amau.Talu ai e mafai ona maualuga atu le mana fa'atonutonu (fa'aulufale mai) nai lo le mana fa'atonutonu (fa'aulufale), e mafai e se transistor ona fa'ateleina se fa'ailoga.O nisi transistors o loʻo afifiina taʻitasi, ae tele isi o loʻo maua i totonumatagaluega tu'ufa'atasi.
Ausetalia-Hungarian physicist Julius Edgar Lilienfeldtuuina mai le manatu o le atransistor aafiaga fanuai le 1926, ae sa le mafai ona fausia moni se masini galue i lena taimi.[2]O le masini galue muamua na fausia o le atransistor fa'afeso'ota'ina faia i le 1947 e Amerika physicistsIoane BardeenmaWalter Brattaina o galue i laloWilliam ShockleyiBell Labs.O le toʻatolu na faʻasoa le 1956Nobel Prize in Physicsmo lo latou ausia.[3]O le ituaiga transistor sili ona faʻaaogaina o leu'amea-oxide-semiconductor field-effect transistor(MOSFET), lea na fatuina eMohamed AtallamaDawon Kahngi Bell Labs i le 1959.[4][5][6]Transistors na suia le fanua o mea tau eletise, ma saunia le ala mo mea laiti ma taugofieleitio,calculators, makomepiuta, faatasi ai ma isi mea.
O le tele o transistor e faia mai le mamasilikoni, ma nisi maigermanium, ae o isi mea semiconductor e faʻaaogaina i nisi taimi.O se transistor atonu e na'o le tasi le ituaiga o ave fe'avea'i, i totonu o se fa'ato'aga-effect transistor, po'o le lua ituaiga o ave fa'avevesi i totonu.bipolar junction transistormasini.Pe a faatusatusa i lefa'alava vai, transistors e masani ona laʻititi ma e manaʻomia le itiiti ifo o le malosi e faʻaogaina ai.O nisi paipa vacuum e sili atu nai lo transistors i le maualuga tele o laina eletise poʻo le maualuga o voltage faʻaogaina.E tele ituaiga o transistors e faia i faʻasalalauga faʻapitoa e le tele o gaosiga.